5/24 Ferroelectric Materials (I) 10:30--12:00 (24-F-1) Dielectric and Piezoelectric Properties of Pb(Zn1/3Nb2/3)O3-PbZrO3 Ferroelecric Oxides Masaru Yokosuka Iwaki-Meisei Univ. (24-F-2) Influences of Composition on 3rd Nonlinear Piezoelectric Coefficient in PZT Ceramics T.Murata, K.Ishii, S.Tsashiro, and H.Igarashi Department of Electronic Engineering, The National Defense Academy (24-F-3) High Performance PNS-PNN-PZT Ceramics sintered at Low Temperature with the Aid of Complex Additives Li2CO3-Bi2O3-CdCO3 XiaoXing WANG, Kenji MURAKAMI, Shoji KANEKO* Research Institute of Electronics, Shizuoka University, *Dept. of Materials Science, Shizuoka University (24-F-4) Dielectric, pyroelectric and piezoelectric properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Ceramics Modified with Ag2O G. B. Kim and S. W. Choi Dept. of Phys. Dankook Univ. (24-F-5) STRUCTURAL AND DIELECTRIC STUDIES OF THE PHASE TRANSITIONS IN Pb(Yb1/2Ta1/2)O3-PbTiO3 CERAMICS Soon Byung Park and Woong Kil Choo Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (24-F-6) Correlation of Internal Friction and Dielectric Measurements in PZT Ferroelectric Ceramic E. M. Bourim, H. Tanaka, M. Gabbay* and G. Fantozzi* National Institute for Research in Inorgainc Materials, *Institut National des Sciences Appliquees 5/24 Thin Films (I) 13:15--14:45 (24-T-1) Composition distribution of compound oxide films fabricated by magnetron sputtering Yoshinori Konishi, Keiko Harada Fuji Electric Corporate Research and Development, Ltd. (24-T-2) Increasing in Switching Charge of Ferroelectric SrBi2Ta2O9 Thin Films with Polarization Reversal Soichiro Okamura, Masaki Takaoka, Takashi Nishida and Tadashi Shiosaki Nara Institute of Science and Technology; NAIST (24-T-3) Hydrogen Barrier of Integrated SrBi2Ta2O9 Ferroelectric Capacitor for Conventional PE-SiO2/PE-Si3N4 Passivation C. W. Suh, S. K. Hong, C. G. Lee, S. W. Lee, Y. M. Kang, B. Yang, N. S. Kang, and J. M. Hwang Hyundai Electronics Industries (24-T-4) STRUCTURAL INDENTIFICATION AND ELECTRICAL PROPERTIES OF THE NEW PYROCHLORE PHASE IN THE Sr-Bi-Ta-Ti-O SYSTEM Chung-Hsin Lu, Bu-Kuan Fang, and Cheng-Yen Wen Department of Chemical Engineering, National Taiwan University (24-T-5) Effects of Crystallization annealing Sequence on Morphology of Pt/SrBi2(Ta,Nb)2O9 Interface and Electrical Properties of Ferroelectric Capacitor Woo Seok Yang, Seung Jin Yeom, Jae Sung Roh, and Chung Tae Kim Hyundai Electronics Industries Co., Ltd, (24-T-6) PHASE FORMATIONS AND ELECTRICAL PROPERTIES OF (SrxBa1-x) Bi2Ta2O9 THIN FILMS Won-Jae Lee, In-Kyu You, Il-Suk Yang, Byoung-Gon Yu and Kyoung-Ik Cho Micro-Electronics Technology Laboratory, Electronics and Telecommunications Research Institute (ETRI) 5/24 Piezoelectric Materials (I) 15:00--16:15 (24-P-1) Piezoelectric Properties of KNbO3 Thickness-Extensional Vibrators Kiyoshi Nakamura, Yoshiko Kawamura and Tsuyoshi Tokiwa Graduate School of Engineering, Tohoku University (24-P-2) Temperature Dependence of Piezoelectric Properties of a High Curie Temperature Pb(In1/2Nb1/2)O3-PbTiO3 Binary System Single Crystal near a Morphotropic Phase Boundary N. Yasuda, H. Ohwa, D. Hasegawa, K. Hayashi, Y. Hosono*, Y. Yamashita*, M. Iwata**, Y. Ishibashi*** Gifu University, *Toshiba Corporation, **Nagoya University, ***Aichi Shukutoku University (24-P-3) Crystal growth of PSN-PMN-PT ternary single crystal and their electrical properties Yasuharu Hosono, Kouichi Harada, Yohachi Yamashita and Zuo-Guang Ye* Power Supply Materials and Devices Laboratory, Corporate R&D Center, Toshiba Corporation, *Dept. of Chemistry, Simon Fraser University (24-P-4) Effect of Molecular Mass of B-site ions on Electromechanical Coupling Factors of Lead Based Perovskite Piezoelectric Materials Yohachi YAMASHITA, Yasuharu HOSONO, Kouichi HARADA and Noboru ICHINOSE* Corporate R&D Center, Toshiba Corp., *Waseda University (24-P-5) The Growth of New Piezocrystal PMNT Haosu Luo, Guishen Xu, Huiqing Xu, Pingchu Wang and Z. Yin Shanghai Institute of Ceramics, Chinese Academy of Sciences 5/24 Thin Films (II) 16:30--18:00 (24-T-7) Preparation and Characterization of Epitaxial PZT film on (Ti,Al)N/TiN/Si substrate by MOCVD Atsushi Sakurai, X. M. Li, Kosuke Shiratsuyu, Katsuhiko Tanaka and Yukio Sakabe Murata Mfg. Co., Ltd R&D Division (24-T-8) Preparation and Characterization of Pb(Zr,Ti)O3 Thin Films on Glass Substrates Tsuyoshi Hiroki, Masahiko Akiyama, Tomomasa Ueda, Yujiro Hara, Yutaka Onozuka, and Kouji Suzuki Display Materials and Devices Laboratory, Corporation R&D Center, Toshiba Corp. (24-T-9) Preparation of PZT Ultra-Thin Films Using LB Film as Precursor H. Sugai, K. Takahiro**, T. Iijima* ans H. Masumoto** Research Institute for Magnetic and Electric Materials, *Tohoku National Industrial Research Institute, **Institute for Materials Research, Tohoku University (24-T-10) Fabrication of PbTiO3/Pt/YSZ hetero-epitaxial film on substrate. Kouji Tokita and Hideo Hoshi* Department of Innovative and Engineered Materials, Interdisciplinary Graduated School of Sciencs and Engineering, Tokyo Institute of Technology. *Fundamental Research Dept., Central RD Laboratory, Japan Energy Corp. (24-T-11) Observations of initial growth stage of PbZrxTi1-xO3 thin films by MOCVD H. Fujisawa, K. Morimoto, K. Murakami, M. Shimizu, H. Niu, K. Honda*, S. Ohtani* Himeji Institute of Technology, *Fujitsu Laboratory (24-T-12) Preparation and Properties of Perovskite Pb(Zr,Ti)O3 Thin Films on YSZ(111)/Si(111) Substrates by Post-Deposition Annealing Je-Deok KIM, Sukreen Hana, Kimihiro SASAKI and Tomonobu HATA Department of Electrical and Computer Engineering, Kanazawa University 5/25 Thin Films (III) 9:00--10:15 (25-T-13) Preparation of Layer-Structured CaBi2Ta2O9 Ferroelectric Thin Films Through an Alkoxide Route Kazumi Kato National Industrial Research Institute of Nagoya, Tokyo Institute of Technology (25-T-14) Control on Crystal Orientation of SrBi2Ta2O9 Thin Films by Multi-layer Method T. Yoshie, T. Hoshika, T. Osaka, I. Koiwa*, Y. Sawada**, A. Hashimoto** Waseda University, *Oki Elecrtric Industry Co. Ltd., **Tokyo Ohka Kogyo Co. Ltd. (25-T-15) Identification of Fluorite Phase in SrBi2(Ta1-xNbx)2O9 Thin Films K. Saito, M. Miyake, I. Yamaji, T. Akai, M. Mitsuya*, K. Ishikawa*, N. Nukaga* and H. Funakubo* Philips Japan Ltd., *TiTech (25-T-16) Preparation and Characterization of Sr2(Ta1-X,NbX)2O7 ferroelectric thin film by Pulsed Laser Deposition s. Nakaiso, H. Sugiyama, M. Noda and M. Okuyama Graduate School of Engineering Science, Osaka University (25-T-17) Preparation of ra2Ta1.5Nb0.5O9 Ferroelectric Thin Film by RF Sputtering on Large Substrate T. Masuda, Y. Miyaguchi, Y. Nishioka, K. Suu and S. Sun CHIBA Institute for Super Materials, ULVAC Japan, Ltd. 5/25 Thin Films (IV) 10:30--12:00 (25-T-18) Ferroelectric and colossal magnetoresistive properties of PZT/LSMO heterostructures film. F. Mitsugi, Y. Yamagata, T. Ikegami, K. Ebihara, J. Narayan* and A. M. Grishin** Kumamoto Univ, **North Carolina State Univ, **Royal Institute of Technology (25-T-19) Ferroelectric properties of epitaxial PZT/Ir/ZrN/Si structure on Ir/(100)YSZ/(100)Si structures Sadayoshi Horii*, Seiji Yokoyama, and Susumu Horita (Japan Advanced Institute of Science and Technology, Hokuriku) *Delegated from KOKUSAI ELECTRIC CO., LTD (25-T-20) Characterization of Imprint Phenomina in PLZT Capacitor by Using AFM Displacement Measurement Chikako Yoshida and Tetsuro Tamura Fujitsu Limited (25-T-21) Preparation and Ezaluation of PZT Thin Films for Low Voltage Operation Nobuyuki Soyama, Kazunari Maki, Satoru Mori and Katsumi Ogi Mistubishi Materials Corporation (25-T-22) Ferroelectric Propreties of Al doped PZT Thin Films Prepared by CSD Process T. Iijima, G. He, Z. Wang, H. Tsuboi*, K. Hiyama* an M. Okada* Tohoku National Industrial Research Institute, *YAMAHA Co. Material & Development Center (25-T-23) Effect of Pb Content in Target on Electrical Properties of Laser Ablation Derived PZT Thin Films Zhan-Jie Wang, Kaoru Kikuchi and Ryutaro Maeda Mechanical Engineering Laboratory, AIST, MITI 5/25 Ferroelectric Materials (II) 13:15--14:45 (25-F-7) Selective-Area Re-poling of Single Crystalline LiTaO3 and Characterization Hiroyuki Yagyu and Tomoaki Matsushima Advanced Technology Reserch Laboratory, Matsushita Electric Works,Ltd. (25-F-8) Dielectric Properties of Bisumth-system Perovskite Oxides Masaru Watanabe and Noboru Ichinose School of Science and Engineering, Waseda University (25-F-9) Preparation and Properties of SrBi2Ta2O9 Ceramics U Kazuo Shoji, Kazuo Shibata, Tohru Nakayama and Koichiro Sakata* Ashikaga Institute of Technology, *Science University of Tokyo (25-F-10) Study of Occupationl Sites and Dielectric Properties of HO-Mn substituted BaTiO3 H. Kishi, N. Kohzu, Y. Iguchi, J. Sugino*, H. Ohsato* and T. Okuda Taiyo Yuden Co.,Ltd., *Nagoya Institute of Technology. (25-F-11) Effect of microstructure on reliability of Ca(TiZr)O3-based MLCs T. Motoki, M. Naito, H. Sano, T. Konoike and K.Tomono Murata Mfg. Co., LTD (25-F-12) Depedence of the number of direlectric layer on the electrical performance and the reliability of MLCCs Y. Nakano, T. Masuda and T. Nomura Materials Research Center, TDK Co. 5/25 Thin Films (V) 15:00--16:15 (25-T-24) Epitaxial BaTiO3 film growth by high gas pressure sputtering T. Yasumoto, N. Yanase, K. Abe and T. Kawakubo Corporate R&D Center, Toshiba Corp., (25-T-25) Effect of gas phase reactions on the deposition of (Ba,Sr)TiO3 film Shun Momose, Ryusuke Sahara, Toshihiro Nakamura, and Kunihide Tachibana Department of Electronic Science and Engineering, Kyoto University (25-T-26) Thickness Dependence of Characteristics for (Ba,Sr)TiO3 Thin films Prepared by MOCVD Yutaka Takeshima, Katsuhiko Tanaka, Yukio Sakabe Reserch & Development Division, Murata Manufacturing Co., Ltd. (25-T-27) Reproducible Deposition of (Ba,Sr)TiO3 Thin Film by Liquid-source CVD Apparatus Tsuyoshi Horikawa, Mikio Yamamuka, Masayoshi Tarutani, Takaaki Kawahara and Tatsuo Oomori Advanced Technology R&D Center, Mitsubishi Electric Corp. (25-T-28) MOCVD Deposition of BST Thin Films for Future DRAM Applications J. Lindner, M. Schumacher, F. Schienle, D. Burgess, P. Strzyzewski and H. Jurgensen AIXTRON 5/25 Invited 16:30--17:30 (25-I-1) Piezoelectric PZT and Composit H. Banno 5/26 Piezoelectric Materials (II) 9:00--10:15 (26-P-6) Preparation of PZT Thick Films by an Interfacial Polymerization Method and Their Electric Properties Takaaki Tsurumi, Shuichi Ozawa, Satoshi Wada and Masayuki Yamane Tokyo Institute of Technology (26-P-7) Preparation of Multilayered PbNi1/3Nb2/3O3-PbTiO3-PbZrO3 Ceramic Actuator M. Kondo, M. Hida, K. Omote, S. Taniguchi, T. Mita, S. Umeniya and K. Kurihara Fujitsu Laboratories Ltd. (26-P-8) Low Temperature Preparation of Lead Ferroelectric Thick Films by Screen printing Tomoaki Futakuchi*, Kunitaka Nakano, Masatoshi Adachi *Toyama Industrial Technology Center, Toyama Prefectural University (26-P-9) Evaluation of Sol-Gel Derived Pb(Zr,Ti)O3 Thick Films, Consisting of Thick and Thin Layers. Kazunari Maki, Nobuyuki Soyama, Satoru Mori and Katumi Ogi Mitsubishi Materials Corporation (26-P-10) Low-Temperature Processing of Pb(Zr0.53Ti0.47)O3 Thin Films by Sol-Gel-Casting Tomoya Ohno, Masahumi Kunieda, Hisao Suzuki and Takashi Hayashi* Shizuoka University, *Shonan Institute of Technology 5/26 Piezoelectric Materials (III) 10:30--12:00 (26-P-11) Piezoelectric Characerization of the Low-Temperature-Sinterable PZT-Pb(Ni,Nb)O3 Ceramics K. Hayashi, K. Shiratsuyu, A. Ando and Y. Sakabe Murata Manufacturing (26-P-12) Actuation Properties of PZT Thick Films Structured on Si Membranes by Aerosol Deposition Method Maxim Lebedev*, Jun Akedo and Yoshikazu Akiyama** Mechanical Engineering Laboratory, A.I.S.T., M.I.T.I., *JST fellow, **R&D Center RICOH Co., LTD. (26-P-13) Poling Field Dependance of Crystal Orientation and Ferroelectric Properties in Lead Titanate Ceramics Toshio Ogawa Depertment of Electronic Engineering, Shizuoka Institute of Science and Technology (26-P-14) Piezoelectric Properties of Bismuth Layer-Structured Ferroelectrics Srm-3+xBi4-xTim-xTaxO3m+3. H. Nagata, T. Takahashi, S. Miyamura and T. Takenaka Faculty of Science and Technology, Science University of Tokyo (26-P-15) Designed Textured and Piezoelectric Properties of Bismuth layer-Structured Ferroelectric Ceramics Tsuguto Takeuchi, Yasuyosi Saito and Toshihiko Tani Toyota CRDL (26-P-16) The Thickness-Shear Vibration Mode Characteristics of SrBi4Ti4O15 based Ceramics Hitoshi Oka, Masakazu Hirose, Tkeo Tsukada, Yasuo Watanabe, Takeshi Nomura Materials Research Center, TDK Corporation 5/26 Thin Films (VI) 13:15--14:45 (26-T-29) Degradation of Ferroelectric Capacitor during Metalization Processes and Anti-degradation Effect of SrRuO3 Electrode. Osamu Hidaka, Iwao Kunishima ULSI Microelectronics Engineering Laboratory, Toshiba Corporation Semiconductor Company (26-T-30) Effect of Substrate Cooling on Active Ammonia Gas Treatment by Cat-CVD for Ferroelectric Capacitors Yoshiharu Minamikawa, Yasuto Yonezawa, Takashi Nakamura*, Yoshikazu Fujimori* and Atsushi Masuda**, Hideki Matsumura** Industrial Research Institute of Ishikawa, *Rohm Co., Ltd. **Japan Advanced Institute of Science and Technology (26-T-31) Effect of BaPbO3 substrate on crystallization of Pb(Zr0.53Ti0.47)O3 films S. Takahashi, S. Takada, S. Kohiki Kyusyu Institute of Technology (26-T-32) Effect of Pt/SrRuO3 Top Electrodes on Ferroelectric Properties for Epitaxial (Pb,La)(Zr,Ti)O3 Thin Films Masafumi Kobune, Osamu Matsuura, Tomoaki Matsuzaki, Atsushi Mineshige, Satoshi Fujii, Hironori Fujisawa*, Masaru Shimizu* and Hirohiko Niu* Himeji Institute of Technology E Applied Chemistry, *Electronic Engineering (26-T-33) Measurement of Electric-Field Indused Displacements in (Pb,La)TiO3 Thin Films Using a Scanning Probe Microscopy Hiroshi Maiwa and Noboru Ichinose* Shonan Institute of Technology, *Waseda University 5/26 Thin Films (VII) 15:00--16:00 (26-T-34) Ferroelectric Properties of Thick Pb(Zr1-xTix)O3 Films Prepared by Pulsed Laser Deposition Cheng-Shiung Lin, Hung-Hsiang Wang, I-Nan Lin* and Hsiu-Fung Cheng** Department of Materials Science and Engineering, *Materials Science Center; National Tsing-Hua University, **Department of Physics, University of Bristol (26-T-35) Preparation and Characterization of Ferroelectrics BaTi0.91(Hf0.5,Zr0.5)0.09O3 Thin Films by Sol-gel Process Using Titanium and Zirconium Alkoxide Jirawat Thongrueng, Nishio Keishi, Tsuchiya Toshio and Nagata Kunihiro* Science University of Tokyo, *National Defence Academy (26-T-36) Preparations and ferroelectric properties of Ti-site substituted BaTiO3 thin films H. Kakemoto, K. Kakimoto, S. Fujita and Y. Masuda Hachinohe Institute of Technology (26-T-37) Sidewall-fence-free Etching Using Rounded Shape Resist in Rie Reactor Jun Hee Cho, Yeo Song Seol, Jin Woong Kim, and Jeong Mo Hwang Memory R&D Division, Hyundai Electronics Industries Co., Ltd. (26-T-38) Influence of La0.5Sr0.5CoO3 Heterostructure Electrodes on Pb(Zr,Ti)O3 Thin Film Properties Ki Vin Im, Bong Jin Kuh and Woong Kil Choo Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology 5/26 Thin Films (VIII) 16:15--17:15 (26-T-39) Charge properties of Bi-rich Sr-poor Strontium Bismuth Tantarate (Bi2.2 Sr0.8 Ta2O9) Masahiro Tanaka, Katsuyuki Hironaka and Akira Onodera* Sony Corporation Core Technology & Network Company, *Hokkaido University (26-T-40) Direct preparation of SrBi2Ta2O9 thin film at low temperature by ECR plasma enhanced CVD and its electrical properties N.Nukaga, M.Mitsuya, and H.Funakubo Dep.Innov.Eng.Mater., Tokyo Inst.Tech. (26-T-41) Metal-Organic Chemial Vapor Deposition of Ferroelectric SrBi2Ta2O9 Thin Films M. Schumacher, D. Burgess, J. Lindner, F. Schienle, H. Juergensen, S. Narayan*, L. McMillan*, C. Paz de Araujo*, K. Uchiyama** and T. Otsuki** AIXTRON, *Symetrix, ** Panasonic Technologies (26-T-42) Ferroelectric Sr2(Nb,Ta)2O7 Thin Films Prepared by Chemical Solution Deposition Chang Young Kim, Chang Young Koo, Dong Chan Woo, and Hee Young Lee Department of Materials Science and Engineering, Yeungnam University 5/26 Fundamentals (I) 9:00--10:15 (26-B-1) Electronic states of perovskite oxides and ferroeletoricity Hiromu Miyazawa, Eiji Natori, Satoru Miyashita, Tatsuya Shimoda and Fumiyuki Ishii*, Tamio Oguchi* Seiko Epson Corporation, *Hiroshima University (26-B-2) Crystal Structure of High-Temperature Phase in Bi-Layered Perovskite Ferroelectric SBT A. Onodera, T. KUBO, K. Yoshino, S. Kojima*, H. Yamashita** and T. Takama*** Hokkaido Univ, *Tsukuba Univ, **Hokkai-Gakuen Univ, ***Hokaido Univ (26-B-3) Observation of crystallization process from amorphous Bi4Ti3O12 prepared by rapid quenching M. Takashige, S. Hamazaki, Y. Takahashi, F. Shimizu, T. Yamaguchi* and S. Kojima** Iwaki Meisei University, *Meisei University, **Tsukuba University (26-B-4) Simultaneous Observation of Nanometer Ferroelectric Domain and Topography Using Scanning Nonlinear Dielectric Microscope Hiroyuki Odagawa, Yasuo Cho Research Institute of Electrical Communication, Tohoku University 5/26 Fundamentals (II) 10:30--12:00 (26-B-5) Raman Studies of the Effects of Nb Dopant on the Ferroelectric Properties in Lead Titanate Thin Film D. S. Fu, T. Ohno, T. Ogawa, H. Suzuki, K. Ishikawa and T. Hayashi* Shizuoka University, *Shonan Institute of Technology (26-B-6) Size Effect of Ferroelectric Proprety of BaTiO3 powder T. Yamamoto, H. Okino and H. Moriwaki* Dept. of Electrical Eng., National Defense Academy, *Graduate Scool of Eng., Kyoto Univ. (26-B-7) Study of Relaxor Ferroelectric Single Crystals by High Resolution Micro-Brillouin Scattering Fuming Jiang and Seiji Kojima University of Tsukuba (26-B-8) Development of long-range order in relaxor ferroelectrics Kouji FUJISHIRO*, Yoshiaki UESU*,**, Yasusada YAMADA**, Shigeo MORI***, and Naoki YAMAMOTO*** *Department of Physics, **RISE, Waseda Univ., ***Department of Materials Science and Engineering, Tokyo Institute of Technology (26-B-9) Raman Scattering in the (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 mixed crystal system M. Iwata, H. Hoshino, H. Orihara, H. Ohwa*, N. Yasuda* and Y. Ishibashi** School of Engineering, Nagoya Univ., *Electric and Information Department, Gifu Univ., and **Aichi Shukutoku Univ. (26-B-10) NEUTRON DIFFRACTION STUDIES OF Pb(ZrxTi1-x)O3 CERAMICS J. Frantti, J. Lappalainen, S. Eriksson*, V. Lantto, S. Nishio**, M. Kakihana**, and H. Rundl:of* Microelectronics and Materials Physics Laboratories, *Studsvik Neutron Research Laboratory,** Materials and Structures Laboratory (26-B-11) PROBING OF NANO-SCALED NONSTOICHIOMETRIC 1:1 ORDERING IN RELAXOR FERROELECTRIC LEAD-BASED COMPLEX PEROVSKITE COMPOUNDS BY RAMAN SPECTROSCOPY Byung-Kook Kim Materials Science and Technology Division, Korea Institute of Science and Technology (KIST) 5/26 Microwave Materials 13:15--14:45 (26-M-1) First-priciples investigation of the phase stability for Ba(B'2+1/3B''5+2/3)O3 microwave dielectrics with the complex perovskite structure Takeshi TAKAHSHI, Eric J. WU* and Gerbrand CEDER* High Freq. Devices Dic., TDK Corp., *DMSE, Mass. Inst. Of Tech. (26-M-2) Microwave dielectric properties of Ba4(Nb1-y,Biy)9+1/3Ti18O54 solid solution T. Okawa*, M. Imaeda and H. Ohsato Nagoya Institute of Technology, *Daiken Chemical Co.,Ltd. (26-M-3) Dielectric properties and crystal structure of Y2(Ba1-xSrjiCu1-Zny)O5 solid solutions synthesized by a solid-state reaction method Akinori Kan, Hirotaka Ogawa, Shuuhei Yokota and Hitoshi Ohsato* Meijo University, *Nagoya Institute of Technology (26-M-4) Microwave Dielectric Characteristics of the Ca2/5Sm2/5TiO3-Li1/2Nd1/2TiO3 Ceramics Woo Sup Kim, Ki Hyun Yoon, and Eung Soo Kim* Yonsei University, *Kyonggi University (26-M-5) TERAHERTZ RESPONSE OF BULK Ba(Mg1/3Ta2/3)O3 T.R. Tsai, M.H. Liang* ,C.C. Chi and I.N. Lin Materials Science Center and *Department of Material Science Engineering, National Tsing-Hua University (26-M-6) Growth and characterization of AgGaS2 crystal by hydrothermal method R. Komatsu, N. Watanabe*, E. Komai*, A. Kitakaze**, K. Ikeda Yamaguchi University, *Mitsubishi Materials Corp., **Tohoku University 5/26 Optical Application 15:00--16:00 (26-O-1) Diameter Control of K3Li2-xNb5+xO15+2x Single Crystal Fibers Makoto Matsukura, Junichi Murakami, Tomoaki Karaki and Masatoshi Adachi Toyama Prefectual University (26-O-2) Semilinear Type Self-Pumped Phase-Conjugate Mirror with Two Cu:KNSBN Crystals Masato Doi and Akira Sasaki Graduate School of Science and Engineering,Shizuoka University (26-O-3) Blue and Green Solid-State Lasers Using MgO-LiNbO3 Periodically Poled SHG Crystal A. Harada, Y. Nihei, Y. Okazaki and K. Kamiyama Fuji Photo Film (26-O-4) Temperature Dependence of Phonon Hole Position Fujio Tsuruoka Kurume University 5/26 Piezoelectric Materials (IV) 16:15--17:15 (26-P-17) Polarization Reversal Phenomena of Ferroelectric Fluoro-Polymers Atsushi Konno, Kazuyoshi Shiga, Hideshige Suzuki, Tomonori Koda and Susumu Ikeda Faculty of Engineering, Yamagata University (26-P-18) Electron-irradiation Induced Phase transition in P(VDF/TrFE) Co-polymer Tomoaki Karaki, Ichin Chou* and Eric Cross* Toyama Prefectural University, *Penn State University (26-P-19) Dielectric and Piezoelectric Properties of PZNT/PVDF Composites Produced by Sol-Gel Method Yoshiro Tajitsu, Masato Yonezawa, Akira Sato, Hiroyuki Tomiyama, Munehiro Date*, Eichi Fukada*, Yohachi Yamashita** Dept. of Materials Sci. & Eng., Yamagata Univ., *Kobayashi Inst. of Phys. Res., **Materials & Devices Res. Lab., R&D Cent., Toshiba Co. (26-P-20) Processing of Bulk-Piezoelectric Ceramics Using Reactive Ion Etching and Its Application to Piezocomposites Katsuhiro Wakabayashi*, Takashi Abe, Xinghua Li, Shinan Wang and Masayoshi Esashi *Olympus Optical Co., LTD., Tohoku University 5/26 Tutorial 17:30--18:30 (26-TU-1) Epitaxial Growth and Defect Structure of Ferroelectric Thin Films M. Fujimoto Taiyo Yuuden 5/27 Piezoelectric Applications 9:00--10:30 (27-A-1) Application of Multilayer Ceramic Capacitor to Pb-less Electro-Machanical Transducer Yoshiyuki JYOUNO, Yoshiro TOMIKAWA Faculty of Engineering, Yamagata University (27-A-2) An Analysis of Jumping and Dropping Phenomena of Piezoelectric Transducers using the Electrical Equivalent Circuit Constants at the Large Vibration Amplitude Level. Mikio UMEDA, Kentaro NAKAMURA*, Sadayuki TAKAHASHI** and Sadayuki UEHA* Niigata Polytechnic College, *Tokyo Institute of Technology, **NEC Corporation (27-A-3) Measurement of Electrorheology Effect of Ferroelectric Liquid Crystal by SH Wave Masaru Inoue*,**, Hiroshi Moritake*, Kohji Toda* and Katsumi Yoshino** *National Defense Academy, **Osaka Univ. (27-A-4) A New Nondestructive Evaluation Method for SAW Velocity on Piezoelectric Wafer Chunyun Jian, Atushi Tsuboi and Satoshi Uda Mitsubishi Materials Co., Ltd.) (27-A-5) Vibration properties of Gyros using piezoelectric thin film S.H. Lee, G. Suzuki, M. Esashi, and T. Iijima* Tohoku University, *Tohoku National Industrial Research Institute (27-A-6) An observation of the dynamics of lubricated contact surface in Ultrasonic motor Seigen Maeno, Takaaki Ishii, Kentaro Nakamura and Sadayuki Ueha Precision and Intelligence Laboratory, Tokyo Institute of Technology 5/27 Thin Films (IX) 10:45--12:30 (27-T-43) Characterization of MFMIS Structures Using (Pb,La)(Zr,Ti)O3 and Y2O3 Films Eiske Tokumitu, Daisuke Takahasi and Hiroshi Ishiwara* Precision and Intelligence Laboratory, *Frontier Collaborative Research Center, Tokyo Institute of Technology (27-T-44) Effect of YSZ Thickness on Crystal Structure and Electric Property of Epitaxial CeO2/YSZ Buffer Layer in MFIS Stacked Structures Tomoaki Yamada, Naoki Wakiya, Kazuo Shinozaki and Nobuyasu Mizutani Department of Metallurgy and Ceramic Science, Graduate School of Science and Engineering, Tokyo Institute of Technology (27-T-45) THE STUDY OF CRYSTALLIZATION IN PZT/PT THIN FILMS ON Mg2TiO4 BUFFER LAYER FOR MFMIS STRUCTURE Choon-Ho Lee and Jung-Hoon Yeom School of Chemical and Materials Eng., Keimyung Univ. (27-T-46) Preparation and Properties of Bi2SiO5/Si Structures Masaki Yamaguchi*,**, Kouji Hiraki*, Takao Nagatomo*,** and Yoishiro Masuda*** *Faculty of Engineering, Shibaura Institute of Tecnology, **Reseaech Organization for Advanced Engineering, Shibaura Institute of Technology, ***Faculty of Engineering, Hachinohe Institute of Technology (27-T-47) Initial stage of thin film growth of pulsed laser deposited YMnO3 thin film D. Ito, N. Fujimura, K. Kakuno and T. Ito Dept. of Applied Mater. Sci., Coll. Of Eng., Osaka Pref. Univ. (27-T-48) Formation of Chalcogenide Ferroelectric Films in Sulfur System an Their Ferroelectric Propreties Y. Hotta, E. Rokuta, H. Tabata, H. Kobayashi and T. Kawai Osaka University (27-T-49) Electrical properties of MFIS structures fabricated by epitaxial Bi4Ti3O12 thin films S. Migita, S.-B. Xiong, K. Sakamaki*, H. Ota, Y. Tarui and S. Sakai Electrotechnical Laboratory, *Nippon Precision Circuits Inc.